China’s Jingsheng Unveils World’s First Fully Localized 12-Inch SiC Production Line, Redefining Semiconductor Self-Sufficiency

Jingsheng’s 12-Inch SiC Milestone: A Game Changer for China’s Semiconductor Industry

Zhejiang Jingsheng Mechanical & Electrical, through its subsidiary SuperSiC has officially commissioned China’s first fully in-house developed and localized 12-inch silicon carbide (SiC) substrate pilot production line on September 26, 2025. This pioneering achievement is a cornerstone in China’s ambitious drive for semiconductor self-sufficiency, marking the debut of a domestically engineered and manufactured SiC production ecosystem.

What Makes the 12-Inch SiC Production Line a Breakthrough?

The transition from 8-inch to 12-inch SiC wafers is more than a simple scale-up. According to company disclosures and industry analysis, the new 12-inch line is expected to increase chip yield per wafer by 2.5 times compared to existing 8-inch wafers. This substantial jump in output per wafer directly translates to a potential 40% reduction in SiC wafer costs and a significant decrease in the price of automotive-grade power modules—from approximately $150 to $90 per unit.

The implications reach far beyond manufacturing: lower costs and higher yields could accelerate adoption of SiC chips in critical sectors like new energy vehicles (NEVs), solar power, and AI data centers.

Comparing 8-Inch vs. 12-Inch SiC: The Quantifiable Leap

Driving China’s Push for Semiconductor Self-Sufficiency

The timing of this launch is pivotal. As global supply chains face increasing geopolitical and economic pressures, the ability to produce advanced SiC substrates entirely domestically addresses a core vulnerability for China’s high-tech industries. The localized production line means that every stage—from equipment to substrate processing—relies on homegrown technology and talent.

Other Chinese players, such as SICC, are also achieving strong yields on 12-inch SiC lines and are targeting mass production by the end of 2025, while global competitors like Infineon and TanKeBlue are planning 12-inch SiC MOSFETs for 2026. This rapid progress signals China’s intent not only to meet domestic demand but to challenge established international suppliers on performance and price.

Industry and Market Reactions: Optimism at Home, Caution Abroad

The response within China’s semiconductor sector has been one of strong optimism. Industry insiders view the commissioning of Jingsheng’s 12-inch SiC line as a turning point that will drive down costs and enhance global competitiveness, particularly for NEVs, solar, and AI infrastructure. As one executive noted:

“This will play a key role in cost optimization for downstream sectors such as new energy vehicles, solar power, and 5G communications.”

Internationally, the move has prompted concerns about the impact on global pricing and competitive balance. With China’s rapidly growing market share and increased localization rate, non-Chinese producers may face downward pricing pressure and intensified competition for high-value supply contracts, especially in automotive and renewable energy verticals.

Implications for Global Supply Chains and the Road Ahead

Jingsheng’s technological leap is reverberating across the Asia-Pacific semiconductor landscape. The company’s global expansion, including its new SuperSiC manufacturing facility in Penang, Malaysia, underscores the growing role of Chinese enterprises in international supply chains. The Penang plant is slated to become a major hub for advanced SiC wafer production, further cementing China’s influence from R&D to mass manufacturing.

As China aggressively scales up both its production capacity and technological capabilities, the global market for silicon carbide power devices—forecast to reach billions of dollars by 2027—is poised for rapid transformation. The coming months will test the ability of global competitors to respond to this new era of cost-competitive, high-yield SiC substrates engineered and produced entirely in China.